2 x PT908-7C-R NPN IR VIS Empfänger Fototransistor Infrared Phototransistor 450-1100nm Receiver Diode

2 pcs. PT908-7C-R 940nm Infrared Receiver Diode © androegg ®

2 Stück PT908-7C-R 450-1100nm Fototransistor.

Der PT908-7C-F ist ein Fototransistor mit sphärischer Draufsichtlinse eingegossen in einem Kunststoff- Miniaturgehäuse.

PT908-7C-R IR Fototransistor

Mit einer spektralen Bandbreite von 450-1100nm (940nm peak) eignet sich der PT908-7C-F insbesondere in Kombination mit typischen IR Senderdioden.

2 pcs. PT908-7C-R 450-1100nm Receiver Diode.

The PT908-7C-F is a phototransistor in miniature package which is molded.in.a plastic with spherical top view lens.

PT908-7C-R IR Phototransistor

The device is spectrally matched to infrared emitting diode

PT908-7C-R IR Phototransistor Features:

1. Collector-Emitter Voltage VCEO: 30V
2. Emitter-Collector Voltage VECO: 5V
3. Collector Current IC: 20 mA
4. Operating Temperature Topr: -25 ~ +85 ̊C
5. Storage Temperature Tstg: -40 ~ +85 ̊C
6. Soldering Temperature *1 Tsol: 260 ̊C
7. Power Dissipation at (or below) 25 ̊C Free Air Temperature Pd: 75 mW
8. Rang of Spectral Bandwidth: 450 -1100 nm
9. Wavelength of Peak Sensitivity: 940 nm
10. Collector Dark Current @20V Ee=0mW/cm2: 100nA
11. Collector-Emitter Saturation Voltage @Ic=2mA Ee=1mW/cm2: 0.4V (max.)
12. On State Collector Current @ VCE=5V Ee=0.555mW/cm2: 0.8 – 5mA