2 Stück D882 2SD882 NPN Silicon Power Transistor TO-126

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2 Stück D882 2SD882 NPN Silicon Power Transistor TO-126

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2 Stück D882 2SD882 NPN Silicon Power Transistor TO-126

D882 2SD882 NPN Silicon Power Transistor TO-126 © androegg

 

2 Stück Silicon Power Transistor im TO-126 Gehäuse wie folgt verfügbar:

  • 2 Stück D882 2SD882 NPN Silicon Power Transistor im TO-126 Gehäuse

2 pcs. Silicon Power Transistor TO-126 package available Versions

  • 2 pcs. D882 2SD882 NPN Silicon Power Transistor TO-126 package

 

 

Silicon Power Transistor Features:

  • Low saturation voltage VCE(sat) = 0.5 V MAX. (IC = −2 A, IB = 0.2 A)
  • Excellent hFE linearity and high hFE hFE = 60 to 400 (VCE = 2 V, IC = 1 A)
  • Less cramping space required due to small and thin package and reducing the trouble for attachment to a radiator. No insulator bushing required

 

ABSOLUTE MAXIMUM RATINGS

  • Maximum Temperature
  • Storage Temperature −55 to +150°C
  • Junction Temperature 150°C Maximum
  • Maximum Power Dissipations
  • Total Power Dissipation (TA = 25°C) 1.0 W
  • Total Power Dissipation (TC = 25°C) 10 W
  • Maximum Voltages and Currents (TA = 25°C)
  • VCBO Collector to Base Voltage 40 V
  • VCEO Collector to Emitter Voltage 30 V
  • VEBO Emitter to Base Voltage 5.0 V
  • IC(DC) Collector Current (DC) 3.0 A
  • IC(pulse)* Collector Current (pulse) 7.0 A
  • *Note Pulse Test PW ≤ 350 µs, Duty Cycle ≤ 2%

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